| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for forming a metallic film capable of isolating a member 11 to be etched from radicals of a cleaning gas during the cleaning. SOLUTION: In the apparatus for forming the metallic film, cleaning gas plasma is shielded from the member 11 to be etched by evacuating the member 11 into a conveying chamber 23 by a robot arm 24 during the cleaning, and the member 11 can be isolated from radicals of the cleaning gas during the cleaning. COPYRIGHT: (C)2007,JPO&INPIT
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