Two-terminal solid-state memory device and two-terminal flexible memory device based on nanocrystals or nanoparticles

摘要

A two-terminal memory device based on semiconductor (such as Si or Ge) or metal (such as Al or Au) nanocrystals and/or nanoparticles is described wherein each device has a substrate, a dielectric layer (such as SiO₂ or organic dielectric materials) nanocrystals and/or nanoparticles distributed throughout the dielectric layer, and a metal (or poly-crystalline Si, or conductive organic materials) gate electrode. The memory states of the device are distinguished by charging and discharging the nanocrystals and/or nanoparticles. This two-terminal memory device is much simpler than the conventional four-terminal MOSFET-based memory device in terms of device structure and fabrication process. In addition, it is flexible if the memory devices are fabricated on flexible substrate with organic materials.