发明名称 |
Method of manufacture of semiconductor device and conductive compositions used therein |
摘要 |
The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.
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申请公布号 |
US2006231804(A1) |
申请公布日期 |
2006.10.19 |
申请号 |
US20050106329 |
申请日期 |
2005.04.14 |
申请人 |
WANG YUELI;YOUNG RICHARD JOHN S;CARROLL ALAN F;HANG KENNETH W |
发明人 |
WANG YUELI;YOUNG RICHARD JOHN S.;CARROLL ALAN F.;HANG KENNETH W. |
分类号 |
H01B1/12 |
主分类号 |
H01B1/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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