| 摘要 |
The semiconductor device 100 includes: a semiconductor substrate 102; a capacitor 116 formed on the semiconductor substrate 102, including a structure composed of a lower electrode 118, a capacitive film 120 and an upper electrode 122, which are stacked in this sequence; an extracting unit 124 of the upper electrode 122 of the capacitor 116; and a contact 108 c formed below the extracting unit 124, and providing an electrical coupling between the extracting unit 124 and an underlying interconnect such as an impurity-diffused region 103 and the like.
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