发明名称 |
Method for forming silicide and semiconductor device formed thereby |
摘要 |
A method for forming silicide and a semiconductor device formed thereby. A Si-containing polycrystalline region is converted to an amorphous region, and annealed to form a regrown polycrystalline region having an increased grain size. A silicide layer is formed by reacting a metal and the regrown polycrystalline region having the increased grain size.
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申请公布号 |
US2006231910(A1) |
申请公布日期 |
2006.10.19 |
申请号 |
US20050107625 |
申请日期 |
2005.04.15 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HSIEH TUNG-HENG;CHENG CHIEN-LI;MOR YI-SHIEN;CHEN YUNG-SHUN |
分类号 |
H01L29/78;H01L21/44 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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