Method for manufacturing vertical group III-nitride light emitting device

摘要

The invention provides a vertical group III-nitride light emitting device improved in external extraction efficiency and a method for manufacturing the same. The method includes forming an undoped GaN layer and an insulating layer on a basic substrate. Then, the insulating layer is selectively etched to form an insulating pattern, and an n-doped Al_xGa_yIn_(1-x-y)N layer, an active layer and a p-doped Al_mGa_nIn_(1-m-n)N layer are sequentially formed on the insulating pattern. A conductive substrate is formed on the p-doped Al_mGa_nIn_(1-m-n)N layer. The basic substrate, the undoped gaN layer and the insulating pattern are removed, and an n-electrode is formed on a part of the exposed surface of the n-doped Al_xGa_yIn_(1-x-y)N layer.