STRUCTURE FOR MEASURING GATE MISALIGNMENT AND METHOD FOR THE SAME

摘要

A structure and a method for measuring a gate misalignment are provided to collect plural statistical information and to measure an accurate misaligned distance by monitoring plural semiconductor substrates. A semiconductor substrate includes an active region(110) and an isolation region. A first gate group(200) is formed on a side of the active region to be extended. The first gate group includes plural gates whose widths are the same and whose lengths overlapping with the active region are different from each other. A second gate group(300) is formed on the other side of the active region to be extended. The gates of the first gate group correspond respective gates of the second gate group. The second gate group includes plural gates whose widths are the same and whose lengths overlapping with the active region are different from each other.