| 摘要 |
A method for forming a capacitor of a semiconductor device is provided to prevent the generation of bridges between adjacent capacitors by using a double type TEOS(TetraEthylOrtho Silicate) oxide layer as a cap oxide layer structure instead of a PSG(Phosphor Silicate Glass) layer. A first nitride layer(23) and a first cap oxide layer(24) are sequentially formed on a semiconductor substrate(20) with a bit line(21) and a storage node contact(22). A first hole is formed on the resultant structure by etching selectively the first cap oxide layer. A sacrificial layer for filling the first hole is formed thereon. A second nitride layer(26) and a second cap oxide layer(27) are formed on the resultant structure. A second hole for exposing the second nitride layer to the outside is formed by etching selectively the second cap oxide layer. The storage node contact is exposed to the outside by etching the exposed second nitride layer, the sacrificial layer and the first nitride layer. The first and the second cap oxide layers are made of a TEOS oxide layer.
|
