| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of further improving breakdown voltage by reducing the parasitic capacitance Cgd between the gate and the drain. SOLUTION: The semiconductor device 100 is provided with a gate electrode (5) provided on a semiconductor layer (1); a source electrode (3) and a drain electrode (4) provided on the semiconductor layer (1) so as to sandwich the gate electrode (5): a source wall (6), extending from the source electrode (3) toward between the gate electrode (5) and the drain electrode (4), while passing through the upper part of the gate electrode (5), and having a junction portion (6a) in this extended region; and an electrode section (8) jointing to the junction portion (6a) and extending more closely to the drain electrode (4) side than to the junction section (6a). COPYRIGHT: (C)2007,JPO&INPIT |
