Semiconductor laser diode having ridge portion and method of manufacturing the same

摘要

Provided is a semiconductor laser diode having a ridge portion and a method of manufacturing the semiconductor laser diode. The semiconductor laser diode includes: a first clad layer, an active layer formed on the first clad layer, a second clad layer formed on the active layer and having a stripe shaped ridge portion; and a buried layer formed of AlGaInN and grown on the second clad layer except for a region of an upper surface of the ridge portion.