发明名称 RADIANT EMISSION SEMICONDUCTOR CHIP AND MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE TO SEMICONDUCTOR CHIP OF THE TYPE
摘要 <P>PROBLEM TO BE SOLVED: To easily and economically manufacture a semiconductor substrate having a semiconductor layer row provided with active zones suitable for a lateral principal extending direction, a principal surface, and the generation of radiation, and a radiant emission semiconductor chip provided with an electrical connection element disposed on the principal surface that can be pulse-operated in a reduced modulation time. <P>SOLUTION: The principal surface has an injection region 7 and an isolation region 8, the injection region is conductively connected to a connection element, A carrier is injected into a semiconductor substrate through the injection region only while the semiconductor chip is in operation relative to the isolation region and the injection region, and the connection element is overlapped on the injection region or the isolation region, or is disposed adjacent to the injection region in a lateral direction. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006287223(A) 申请公布日期 2006.10.19
申请号 JP20060093030 申请日期 2006.03.30
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 WIRTH RALPH
分类号 H01L33/10;H01L33/38;H01L33/46 主分类号 H01L33/10
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