| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To make high speed writing/erasing in an arbitrary single memory chip in a semiconductor memory device of a multi-chip package (MCP) structure. <P>SOLUTION: The semiconductor memory device of a MCP structure is built by mounting NOR flash memory chips having voltage booster circuit to supply boosted voltage for writing/erasing in a memory cell array. A boosted voltage control circuits 13, 14, 15 control to use the voltages boosted by operating the booster circuits 11, 12, 13 of the desired number of the unselected chips at the same time together with the voltages boosted in the selected chips, when writing/erasing is made in a memory cell array by selecting an arbitrary and single independent chip. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
