| 摘要 |
PROBLEM TO BE SOLVED: To improve quality of an interpoly insulating film while preventing generation of trap sites in the film. SOLUTION: A floating gate 101 is formed on a channel-forming region in the surface vicinity of a silicon substrate 112, and an interpoly insulating film 134 is formed in contact with the floating gate 101. A control gate 103, which is opposed to at least a part of the floating gate 101, is formed in contact with the interpoly insulating film 134. The process of forming the interpoly insulating film 134 includes a step of forming the interpoly insulating film 134 on the floating gate 101 in contact thereon, and a subsequent step of exposing the interpoly insulating film 134 to an atmosphere containing a nitrogen-containing gas and oxygen to simultaneously nitride and oxidize the interpoly insulating film 134. COPYRIGHT: (C)2007,JPO&INPIT
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