FORMING HIGH-K DIELECTRIC LAYERS ON SMOOTH SUBSTRATES
摘要
A buffer layer and a high-k metal oxide dielectric may be formed over a smooth silicon substrate using ozone and sonic energy. The substrate smoothness may reduce column growth of the high-k metal oxide gate dielectric. The surface of the substrate may be saturated with hydroxyl terminations prior to deposition.
申请公布号
WO2006012338(A3)
申请公布日期
2006.10.19
申请号
WO2005US22573
申请日期
2005.06.24
申请人
INTEL CORPORATION;BRASK, JUSTIN;KAVALIEROS, JACK;DOCZY, MARK;METZ, MATTHEW;DATTA, SUMAN;SHAH, UDAY;DEWEY, GILBERT;CHAU, ROBERT
发明人
BRASK, JUSTIN;KAVALIEROS, JACK;DOCZY, MARK;METZ, MATTHEW;DATTA, SUMAN;SHAH, UDAY;DEWEY, GILBERT;CHAU, ROBERT