STRUCTURE AND METHOD FOR REALIZING A MICROELECTRONIC DEVICE PROVIDED WITH A NUMBER OF QUANTUM WIRES CAPABLE OF FORMING ONE OR MORE TRANSISTOR CHANNELS

摘要

The invention relates to a microelectronic device provided with a number of quantum wires , which are capable of forming one or more transistor channels and which are optimized with regard to their arrangement, shape and/or composition. The invention also relates to a method for realizing a device of this type, comprising the following steps: forming, in one or more thin layers resting upon a support, a first block and a second block in each of which at least one transistor drain region and at least one transistor source region are to be respectively formed, and forming a structure (205a) connecting the first block (210) and the second block (230), and; forming, on the surface of the structure (205a), wires (220a) connecting a first area of the first block (210) and another area of the second block (230) facing the first area.