FILM FORMING METHOD AND FILM FORMING APPARATUS

摘要

A film forming method is characterized in that the method is provided with a step of introducing a treatment gas including inorganic silane gas into a treatment chamber, in which a placing table composed of ceramics including a metal oxide is arranged, and precoating an inner wall of the treatment chamber including a surface of the placing table with a nonmetal thin film including silicon; a step of placing a substrate to be treated on the placing table precoated with the nonmetal thin film; and a step of introducing a treatment gas including organic silane gas into the treatment chamber, and forming a nonmetal thin film including silicon on a surface of the substrate placed on the placing table.