| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, having superior characteristics such as inductance value, capacitance value or the like, and being easily manufactured in the semiconductor device in which the inductive element and the capacitive element are formed on a semiconductor substrate. SOLUTION: The semiconductor device has the inductive element 3 and the capacitive elements 2 on the semiconductor substrate 1. In the semiconductor device, the inductive element 3 and the capacitive elements 2 are separated up and down by an insulating layer 4b. Accordingly, sufficient spaces for forming the inductive element 3 and the capacitive elements 2 can be ensured as compared with the case, when these elements 3 and 2 are formed in the same layer. Consequently, characteristics, such as the inductance value, the capacitance value or the like, are improved while a structure is simplified and a manufacture can be facilitated. COPYRIGHT: (C)2007,JPO&INPIT
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