发明名称 EVALUATION METHOD OF SPIN VALVE RESISTIVE EFFECT ELEMENT, MANUFACTURING METHOD OF MAGNETIC HEAD, AND MAGNETIC STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an evaluation method of a spin valve resistance effective element capable of evaluating a magnetized state of a pin layer without damaging the spin valve resistance effective element, and to provide a manufacturing method of a magnetic head, or the like. SOLUTION: A DC current (DCT current) which generates a magnetic field in the direction opposite to the predetermined magnetizing direction of the pin layer adjacent to an antiferromagnetic layer, is supplied to the spin valve magnetoresistance effect element 23 (SV element) while supplying a nearly rectangular alternating current (ACT current) to a recording element 22 of the magnetic head 21 equipped with the recording element 22 and the SV element 23. An AC current (magnetization inversion current) of which the current induced from the ACT current is superimposed upon the DCT current, is made to flow into the SV element 23. The ACT current and DCT current of specific values are set to discriminate whether such magnetization inversion is developed or not that the magnetization of the pin layer is inverted to the direction opposite to the predetermined direction. Alternatively, the generation of the magnetization inversion such as the above can be discriminated by successively increasing the current value of ACT current or DCT current. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006286102(A) 申请公布日期 2006.10.19
申请号 JP20050105230 申请日期 2005.03.31
申请人 FUJITSU LTD 发明人 IWASE TAKESHI
分类号 G11B5/455;G11B5/39 主分类号 G11B5/455
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