发明名称 |
SINGLE TRENCH REPAIR METHOD WITH ETCHED QUARTZ FOR ATTENUATED PHASE SHIFTING MASK |
摘要 |
In accordance with the objectives of the invention a new method is provided for the repair of an attenuated phase shifting mask having a contact pattern. The invention etches a single trench in the quartz substrate of the phase shifter mask and removes the impact of a void in the phase shifter material. Alternatively, the invention provides for first conventionally restoring the original dimensions of a contact hole in which a pinhole is present and then etching a single or a double trench in the exposed substrate of the restored contact opening.
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申请公布号 |
US2006234141(A1) |
申请公布日期 |
2006.10.19 |
申请号 |
US20060425423 |
申请日期 |
2006.06.21 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN CHENG-MING |
分类号 |
G03C5/00;G03F1/00;G03F9/00;G03G16/00 |
主分类号 |
G03C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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