发明名称 THIN FILM ELECTRON SOURCE, MANUFACTURING METHOD OF THE SAME, AND IMAGE DISPLAY DEVICE USING THE THIN FILM ELECTRON SOURCE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a thin film electron source of which defect in an anode oxide film is reduced, having high reliability and long life, and an image display device using the same. <P>SOLUTION: An insulation layer of the thin film electron source formed by laminating a first electrode 11, the insulation layer 12, and a second electrode 13 on an insulation substrate 10 in this sequence is formed by an anode oxidation method. The number of defects existing in the insulation layer is reduced to 3×10<SP>19</SP>/cm<SP>3</SP>or less. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2006286617(A) 申请公布日期 2006.10.19
申请号 JP20060057169 申请日期 2006.03.03
申请人 HITACHI LTD;HITACHI DISPLAYS LTD 发明人 SANO YASUSHI;TAMURA TAKUO;KIKUCHI HIROSHI;MIYATA KAZUFUMI;FUKUCHI KAZUHIRO
分类号 H01J1/312;H01J9/02;H01J29/04;H01J31/12 主分类号 H01J1/312
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