发明名称 |
THIN FILM ELECTRON SOURCE, MANUFACTURING METHOD OF THE SAME, AND IMAGE DISPLAY DEVICE USING THE THIN FILM ELECTRON SOURCE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film electron source of which defect in an anode oxide film is reduced, having high reliability and long life, and an image display device using the same. <P>SOLUTION: An insulation layer of the thin film electron source formed by laminating a first electrode 11, the insulation layer 12, and a second electrode 13 on an insulation substrate 10 in this sequence is formed by an anode oxidation method. The number of defects existing in the insulation layer is reduced to 3×10<SP>19</SP>/cm<SP>3</SP>or less. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
申请公布号 |
JP2006286617(A) |
申请公布日期 |
2006.10.19 |
申请号 |
JP20060057169 |
申请日期 |
2006.03.03 |
申请人 |
HITACHI LTD;HITACHI DISPLAYS LTD |
发明人 |
SANO YASUSHI;TAMURA TAKUO;KIKUCHI HIROSHI;MIYATA KAZUFUMI;FUKUCHI KAZUHIRO |
分类号 |
H01J1/312;H01J9/02;H01J29/04;H01J31/12 |
主分类号 |
H01J1/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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