| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high quality high performance semiconductor device in which a wiring capacity and a leakage current can be reduced while preventing the drift and diffusion of a wiring material effectively. <P>SOLUTION: The method for manufacturing a semiconductor device comprises a step for forming a first insulating film 2 on a substrate, step for forming a cap film on the insulating film 2 formed in the first insulating film forming step, a step for forming a wiring trench 3 on the insulating film 2 following to the cap film forming step, a step for forming a metal barrier film 4 in the wiring trench 3 following to the wiring trench forming step, a step for filling the wiring trench 3 with a wiring material 5 to form a wiring film following to the metal barrier film forming step, a step for removing the cap film following to the wiring film forming step, a step for providing an organic barrier film 6 by applying organic paint following to the cap film removing step, and a step for forming a second insulating film 7 following to the organic barrier film forming step. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
