| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device controlled in crystallinity and strain and having low costs, high withstand voltage, and low channel conductance by reducing the thickness of an SiGe layer from which a strain Si layer is obtained, the strain Si layer being formed taking a strain relaxation SiGe layer formed on an Si substrate as a virtual substrate. SOLUTION: The semiconductor substrate includes a first semiconductor laminate structure where an SiGe layer and an Si layer are laminated on the entire surface of a principal surface of a first conductivity type Si substrate or an SOI or on a part of the same, and has dislocation on an interface between the Si substrate and the SiGe layer. A start point of the dislocation line and the end point of the same are existent on the side surface of the substrate, and the start point and the end point are substantially not existent on a principal surface of strain Si, so that the SiGe layer is subjected partly or completely to strain relaxation. The strain Si layer of tension strain is formed on the SiGe layer. Further, a principal surface of the substrate that does not contain the first semiconductor laminated structure can include an compression strain Si region. Furthermore, at least two kinds of field effect transistors can be formed. COPYRIGHT: (C)2007,JPO&INPIT
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