| 摘要 |
PROBLEM TO BE SOLVED: To improve the transfer efficiency of a signal charge by controlling potential distribution following a transfer path of the signal charge, and to improve the sensitivity of a drain region by reducing the drain capacity of the drain region in a transfer transistor, especially, overlapping capacity. SOLUTION: A solid-state imaging device comprises a semiconductor substrate, having an element forming part 1, a signal charge accumulator 2 formed inside the element-forming part 1, a surface shield layer 6, the drain region 105, an insulating film 3, and a gate electrode 4 which is installed on the insulating film 3 and controls the transfer of a signal charge group accumulated in the signal charge accumulator 2. The device is also provided with a shallow reading control layer 101 formed between the surface shielding layer 6 and the drain region 105, and a deep reading control layer 102, formed adjacently below the drain region 105 and the shallow reading control layer 101. The entire drain region 105 is to be one that is not covered with the gate electrode 4. COPYRIGHT: (C)2007,JPO&INPIT
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