| 摘要 |
PROBLEM TO BE SOLVED: To provide a high frequency integrated circuit where wraparound of an interruption signal through an Si substrate is reduced even if a modulation signal is a high frequency signal of not less than several hundreds MHz, and malfunction of an oscillator can be prevented. SOLUTION: Substrate thickness T of the Si substrate 1 mounting the oscillator 2 oscillating an LO signal and a transmission amplifier 10 amplifying the high frequency signal modulated by using the LO signal is specified to be not more than a prescribed value. Even if the modulation signal is the high frequency signal of not less than several hundreds MHz, wraparound of the interruption signal through the Si substrate 1 is reduced and malfunction of the oscillator 2 can be prevented. COPYRIGHT: (C)2007,JPO&INPIT
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