| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element capable of securing a channel length and width for high integration and preventing deep punchthroughs between adjacent transistors, and to provide its manufacturing method. SOLUTION: A semiconductor element is provided with a trench (26) formed in a predetermined region of a semiconductor substrate; a first recess (28); a field oxide film (30)(STI+LOI) embedded in the trench and the first recess; an active region defined by the field oxide film and having a first region (21A) and a second recess (33) that is a second region (21B) with a lower surface compared with the first region; and a step gate pattern (SG) formed on a boundary region between the first region and the second region, having one side extended to the surface of the first region and the other side extended to the surface of the second region, and having a step structure. COPYRIGHT: (C)2007,JPO&INPIT
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