发明名称 Solid-state image-sensing device
摘要 In a solid-state image-sensing device of the invention, for acquisition of sensed-image data, a photoelectric converter disconnecting switch is turned on to make a forcible reset switch perform resetting, then the voltage at the end of a logarithmic conversion MOS transistor that is not connected to the photoelectric converter disconnecting switch is so controlled that the logarithmic conversion MOS transistor is reset according to the threshold voltage thereof, and then an output commensurate with the amount of light incident on the photoelectric converter is delivered; for acquisition of noise data, the photoelectric converter disconnecting switch is turned on to make the forcible reset switch perform resetting, then the photoelectric converter disconnecting switch is turned off, then the voltage at the end of the logarithmic conversion MOS transistor that is not connected to the photoelectric converter disconnecting switch is so controlled that the logarithmic conversion MOS transistor is reset according to the threshold voltage thereof, and then an output unrelated to the amount of light incident on the photoelectric converter is delivered. With this sequence of operations, variations in sensitivity among individual pixels can be corrected for without irradiation with uniform light.
申请公布号 US2006233008(A1) 申请公布日期 2006.10.19
申请号 US20060393429 申请日期 2006.03.30
申请人 NISSAN MOTOR CO., LTD. 发明人 KAKUMOTO TOMOKAZU;THRONGNUMCHAI KRAISORN
分类号 G11C19/08;H01L27/146;H04N5/335;H04N5/353;H04N5/365;H04N5/369;H04N5/374;H04N5/376 主分类号 G11C19/08
代理机构 代理人
主权项
地址