发明名称 METHOD FOR PRODUCING A LAYER CONSISTING OF A DOPED SEMICONDUCTOR MATERIAL
摘要 The invention concerns a method for depositing a layer consisting of a doped semiconductor material on a substrate, as well as a device for implementing said method. According to said method, the doped semiconductor material contains at least one semiconductor matrix material and at least one doping material. Said method consists in vaporizing a mixture of the semiconductor material(s) and of the doping material(s) using a vaporizing source, then in depositing said mixture on the substrate.
申请公布号 WO2006037300(A3) 申请公布日期 2006.10.19
申请号 WO2005DE01761 申请日期 2005.10.04
申请人 NOVALED GMBH;WERNER, ANSGAR;BIRNSTOCK, JAN;MURANO, SVEN 发明人 WERNER, ANSGAR;BIRNSTOCK, JAN;MURANO, SVEN
分类号 H01L51/52 主分类号 H01L51/52
代理机构 代理人
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