发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To achieve a reliable and low-cost good bonding even if it is the case where a semiconductor device is jointed to a substrate with coarse front surfaces, such as a ceramic substrate. <P>SOLUTION: A method of manufacturing the semiconductor device includes a step of thermally compressing a golden bump 50 combined with ultrasonic wave heatment to the connection electrode 43 of the ceramic substrate 40, a step of pressurizing and flattening the golden bump 50 with a flat tool 60, and a step of supplying a flux on the golden bump 50. The method further includes a step of forming a solder film in the terminal of an LED and mounting the LED on the ceramic substrate 40, and a step of heating the ceramic substrate 40 and melting the solder film and joining the terminal and the connection electrode 43 of the LED. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2006286666(A) 申请公布日期 2006.10.19
申请号 JP20050100331 申请日期 2005.03.31
申请人 TOSHIBA CORP 发明人 SHIMOKAWA KAZUO;TOMIOKA TAIZO
分类号 H01L21/60 主分类号 H01L21/60
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