| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus and its manufacturing method to increase a degree of freedom of a wiring design reducing a consumption power due to an interlayer capacitance. SOLUTION: A semiconductor substrate is provided with a photoelectric converter 11a, a vertical CCD 2, and a vertical bus line 16. In the solid imaging apparatus, the vertical CCD 2 is provided with a transfer channel 2a, a first vertical transfer electrode 6, a second vertical transfer electrode 9, and a shielding film 13. In an area the first transfer electrode 6 and the second transfer electrode 9 do not form the transfer channel 2a, the second transfer electrode 9 is arranged to position on the first transfer electrode 6. In the area where the transfer channel 2a is formed, the first transfer electrode 6 and the second transfer electrode 9 are arranged next door each other. Part of the area where the transfer channel 2a of the second transfer electrode 9 is formed is not overlapped with the first transfer electrode 6 in a thickness direction of the semiconductor substrate. COPYRIGHT: (C)2007,JPO&INPIT |
