发明名称 METHOD FOR PRODUCING HIGH PURITY SILICON
摘要 PROBLEM TO BE SOLVED: To provide a method for producing an inexpensive high purity Si source material in a large amount for a solar battery substrate. SOLUTION: The method for manufacturing Si is carried out by using slag on molten Si to migrate impurities in Si to the slag for purification, wherein high purity Si is produced by exposing the slag to reduced pressure. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006282499(A) 申请公布日期 2006.10.19
申请号 JP20060034362 申请日期 2006.02.10
申请人 NIPPON STEEL CORP 发明人 ITO NOBUAKI;KONDO JIRO;OKAZAWA KENSUKE;OKAJIMA MASAKI
分类号 C01B33/037 主分类号 C01B33/037
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