发明名称 |
Memory device having serially connected resistance nodes |
摘要 |
A memory device may include a plurality of resistance nodes. The resistance nodes may be connected serially in a NAND or AND structure, by a plurality of metal plugs. The metal plugs may have a lower resistance. A control device corresponding to each resistance node may control the resistance devices. Each control device may be connected to a bit line and a word line. The bit line may be connected to the metal plugs via a corresponding switch device.
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申请公布号 |
US2006231887(A1) |
申请公布日期 |
2006.10.19 |
申请号 |
US20060376423 |
申请日期 |
2006.03.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM WON-JOO;PARK YOON-DONG |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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