| 摘要 |
The present invention provides a semiconductor laser device having a high reliability and desirable temperature characteristics while being a high-power device. An active layer, and two cladding layers sandwiching the active layer therebetween are formed on a substrate. One of the cladding layers forms a mesa-shaped ridge, and the ridge includes a waveguide region diverging into at least two branches. With this configuration, the density of carriers injected into the rear facet portion of the active layer is decreased, whereby it is possible to improve the temperature characteristics of the semiconductor laser. While the device includes a region across which the ridge bottom width varies continuously, the ridge bottom width is constant near the facet.
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