发明名称 Method of treating inorganic oxide film, electronic device substrate, method of manufacturing electronic device substrate, liquid crystal panel, and electronic apparatus
摘要 A method of treating an inorganic oxide film includes dipping an inorganic oxide film formed by an oblique deposition method having a plurality of pores therein into a treatment liquid containing at least a primary alcohol and a secondary alcohol. The secondary alcohol has a lower molecular weight than that of the primary alcohol. The method also includes reducing pressure of a space where the treatment liquid is provided to infiltrate the treatment liquid into the pores of the inorganic oxide film. Lastly, the method includes chemically bonding the alcohol of the treatment liquid to a surface of the inorganic oxide film and inner surfaces of the pores.
申请公布号 US2006233971(A1) 申请公布日期 2006.10.19
申请号 US20060402317 申请日期 2006.04.11
申请人 SEIKO EPSON CORPORATION 发明人 TERAO KOICHI;SHINOHARA YUJI
分类号 C09K19/00 主分类号 C09K19/00
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