| 摘要 |
PROBLEM TO BE SOLVED: To reduce the ambient temperature dependency of drain current in a semiconductor device wherein MOS transistor is used as a constant-current circuit. SOLUTION: The semiconductor device comprises an element region 12 formed in a substrate 11, an element isolation region 17 so formed as to surround the element region in the substrate 11, and the MOS transistor formed in the element region 12. The area of the element region 12 is so set that a change of current in the MOS transistor with respect to the ambient temperature may be small. COPYRIGHT: (C)2007,JPO&INPIT
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