| 摘要 |
A method for manufacturing a semiconductor device, includes: forming a recognition mark that defines a well-forming region for forming a well on a semiconductor substrate; forming a mask, using the recognition mark, that is patterned so that the well-forming region is opened; introducing an impurity into the well-forming region; performing heat treatment for forming a well by diffusing the impurity; and forming an element isolation region on the semiconductor substrate.
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