MEMORY DEVICE HAVING RESISTANCE NODES SERIALLY CONNECTED EACH OTHER

摘要

A memory device is provided to perform simultaneously an erasing process on a plurality of resistive nodes under a low erase voltage condition by using metal plugs interposed between the resistive nodes. A memory device comprises a plurality of resistive nodes(110) with changeable resistance characteristics according to the voltage applied to first and second terminals of the resistive nodes itself, a plurality of metal plugs, control elements, bit lines, switch elements, and word lines. The metal plugs(120) are interposed between the first terminal of one resistive node and the second terminal of another resistive node to connect the resistive nodes in series. The metal plug has a lower resistance than that of the resistive node.