Transistor circuit with varying resistance lightly doped diffused regions for electrostatic discharge (esd) protection

摘要

A method of forming a transistor (70) in a semiconductor active area (78). The method forms a gate structure (G 2 ) in a fixed relationship to the semiconductor active area thereby defining a first source/drain region (R 1 ) adjacent a first gate structure sidewall and a second source/drain region (R 2 ) adjacent a second sidewall gate structure. The method also forms a lightly doped diffused region (80 1 ) formed in the first source/drain region and extending under the gate structure, wherein the lightly doped diffused region comprises a varying resistance in a direction parallel to the gate structure.