| 摘要 |
<p>846,747. Semi-conductor rectifiers. PHILIPS ELECTRICAL INDUSTRIES Ltd. May 23, 1957 [May 26, 1956], No. 16395/57. Class 37. In a crystal diode comprising a thin body of semi-conductor material provided on one side with an ohmic contact and on the other side with a rectifying contact, at least one of the contacts being an alloy contact, the geometrical proiection of the ohmic contact perpendicular to the said other side lies outside the boundary of the rectifying contact. As shown, Fig. 1, to opposite sides of a disc 1 of p-type silicon are alloyed an aluminium ohmic contact 4 and a rectifying contact 2 of gold-antimony alloy so that the projection AB of the ohmic contact 4 is at a minimum distance d from the rectifying contact. The rectifying contact may be centrally disposed on the disc with an annular ohmic contact on the other side. The distance d may be equal to or greater than the thickness of the semi-conductor body, and may be reduced if the ohmic contact is diffused, e.g. a layer of gallium diffused into the surface of the disc at 1100‹C. and electrolytically copper-plated and supplied with a soldered copper supply wire. In Fig. 4, the ohmic contact 1 is U-shaped, the arms of the U being alloyed to the body 2 and the rectifying contact 4 being disposed between the arms on the other side.</p> |
