| 摘要 |
<p>An optical semiconductor device comprises: a structure (61) including a substrate (50), a diffraction grating (52a), an active layer (54) and a refractive index control layer (60); and an laser element (100) including an electrode (92a) for the active layer, an electrode (92b) for the refractive index control layer and an electrode (92c) for switching, wherein a pre-bias current is previously supplied from the electrode (92a) for the active layer to the active layer (54) in a state where a switching current is not supplied from the electrode (92c) for switching to the active layer (54), and then while a current I drive for activation is supplied from the electrode (92a) for the active layer to the active layer (54), the laser element (100) is turned on by supplying the switching current I sw from the electrode (92c) for switching to a part of the active layer (54), as well as turning off the laser element (100) by halting the supply of the switching current I sw .</p> |
