摘要 |
<p>It is an object of the present invention to provide a phase-change information recording medium, and the like, which is easy to perform initial crystallization, exhibits good recording sensitivity at a linear velocity as high as 10 double speeds or more with as much capacity as DVD-ROM, is capable of overwrite recording and has good storage reliability. For this purpose, the phase-change information recording medium comprises a substrate and at least a first protective layer, a phase-change recording layer, a second protective layer, and a reflective layer disposed on the substrate in one of this sequence and reverse sequence wherein the phase-change recording layer comprises a composition expressed by Sn ± Sb ² Ga ³ Ge ´ Te µ -X ¶ (In this regard, X represents at least one element selected from Ag, Zn, In and Cu. ±, ², ³, ´, µ and ¶ represent composition ratio (atomic percent) of each element and are expressed as 5 ‰¤ ± ‰¤ 25, 40 ‰¤ ² ‰¤ 91, 2 ‰¤ ³ ‰¤ 20, 2 ‰¤ ´ ‰¤ 20,0 ‰¤ µ ‰¤ 10,0 ‰¤ ¶ ‰¤ 10 and ± + ² + ³ + ´ + µ + ¶ = 100).</p> |
申请人 |
RICOH COMPANY, LTD. |
发明人 |
OHKURA, HIROKO;ITO, KAZUNORI;DEGUCHI, HIROSHI;KATO, MASAKI;ABE, MIKIKO;SEKIGUCHI, HIROYOSHI;HARIGAYA, MAKOTO;SHINKAI, MASARU |