发明名称 |
A method and program product for performing double exposure lithography |
摘要 |
A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process. The method includes the steps of: defining an initial H-mask corresponding to the target pattern; defining an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask having a width which is less than a predetermined critical width; identifying vertical critical features in the V-mask having a width which is less than a predetermined critical width; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask. The non-critical features are those features having a width which is greater than or equal to the predetermined critical width. The non-critical features are formed in the H-mask and the V-mask utilizing chrome. The target pattern is then imaged on the substrate by imaging both the H-mask and V-mask. |
申请公布号 |
EP1712954(A1) |
申请公布日期 |
2006.10.18 |
申请号 |
EP20060252050 |
申请日期 |
2006.04.12 |
申请人 |
ASML MASKTOOLS B.V. |
发明人 |
CHEN, JANG FUNG;HSU, DUAN-FU STEPHEN;VAN DEN BROEKE, DOUGLAS |
分类号 |
G03F1/14;G03F7/20 |
主分类号 |
G03F1/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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