发明名称 SUBSTRATE FOR THIN-FILM FORMATION, THIN-FILM SUBSTRATE AND LIGHT EMITTING ELEMENT
摘要 <p>A substrate for forming a single-crystal thin film composed mainly of gallium nitride, indium nitride or aluminum nitride, the substrate comprising a sintered compact composed mainly of a ceramic material; and a thin-film substrate furnished with the single-crystal thin film. The use of the sintered compact composed mainly of a ceramic material, especially sintered compact with optical permeability, as the substrate enables formation thereon of a highly crystalline single-crystal thin film composed mainly of at least one selected from gallium nitride, indium nitride and aluminum nitride. Thus, there is provided a thin-film substrate furnished with a highly crystalline single-crystal thin film. Further, the use of the sintered compact composed mainly of a ceramic material enables providing of a light-emitting device excelling in luminous efficiency.</p>
申请公布号 EP1712662(A1) 申请公布日期 2006.10.18
申请号 EP20040700505 申请日期 2004.01.07
申请人 MIYAHARA, KENICHIRO 发明人 MIYAHARA, KENICHIRO
分类号 C30B29/38;C04B35/00;C04B35/453;C04B35/58;C04B35/581;C04B35/645;C30B25/18;C30B29/40;H01L33/32 主分类号 C30B29/38
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