| 摘要 |
A semiconductor device comprising a plurality of semiconductor elements, at least including an uppermost one, a middle one, and a lowermost one, which are stacked on a substrate; a plurality of wires, each being electrically connected between two of electrodes,
respectively provided on two of the semiconductor elements, or between two of electrodes, respectively provided on said substrate and said lowermost semiconductor element which is directly stacked on said substrate; and a plurality of re-wiring layers each having a predetermined re-wiring pattern, said wires being electrically connected, via the plurality of re-wiring layers, between said two semiconductor elements and between the lowermost semiconductor element and the substrate. |
