发明名称 |
PROCESS FOR PRODUCING n-TYPE SEMICONDUCTOR DIAMOND AND n-TYPE SEMICONDUCTOR DIAMOND |
摘要 |
A method of manufacturing n -type semiconductor diamond by the present invention is characterized in producing diamond incorporating Li and N by implanting Li ions into, so that 10 ppm thereof will be contained in, single-crystal diamond incorporating 10 ppm or more N , or else, in doping single-crystal diamond with Li and N ions, by implanting the ions so that ion-implantation depths at which the post-implantation Li and N concentrations each are 10 ppm or more will overlap, and thereafter annealing the diamond in a temperature range of from 800°C or more to less than 1800°C to electrically activate the Li and N and restore the diamond crystalline structure. In the present invention, n -type semiconductor diamond incorporates, from the surface of the crystal to the same depth, 10 ppm or more of each of Li and N, wherein its sheet resistance is 10 7 ©/–¡ or less.
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申请公布号 |
EP1713116(A1) |
申请公布日期 |
2006.10.18 |
申请号 |
EP20030781011 |
申请日期 |
2003.12.22 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NAMBA, AKIHIKO;YAMAMOTO, YOSHIYUKI;SUMIYA, HITOSHI;NISHIBAYASHI, YOSHIKI;IMAI, TAKAHIRO |
分类号 |
H01L21/265;C30B29/04;H01L21/04;H01L21/425;H01L21/477;H01L29/167 |
主分类号 |
H01L21/265 |
代理机构 |
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主权项 |
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地址 |
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