| 摘要 |
A semiconductor structure 300 comprises a plurality of first track conductors 303 , a plurality of second track conductors 304 , which are insulated with respect to the first track conductors 303 and form a grid together with these first track conductors 303 , and a plurality of third track conductors 307 parallel above the first track conductors 303 , which third track conductors 307 partly cover the second track conductors 304 and are insulated with respect thereto, in which semiconductor structure 300 , between in each case two adjacent second track conductors 304 , there is located an electrical contact 305 between each first track conductor 303 and the corresponding third track conductor 307 which lies above it.
|
