发明名称 |
Semiconductor device |
摘要 |
A semiconductor device according to the present invention comprises a substrate; a copper interconnect layer formed on the top surface side of the substrate; an aluminum bonding pad formed on the top surface side of the copper interconnect layer with an aluminum-based material; and an aluminum interconnect formed on the top surface side of the copper interconnect layer with an aluminum-based material.
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申请公布号 |
US7122902(B2) |
申请公布日期 |
2006.10.17 |
申请号 |
US20020127266 |
申请日期 |
2002.04.22 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
HATANO KEISUKE;ABIRU TAKAHISA |
分类号 |
H01L23/48;H01L29/43;H01L21/28;H01L21/3205;H01L21/60;H01L21/768;H01L23/485;H01L23/52;H01L23/522;H01L23/532 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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