发明名称 Semiconductor device
摘要 A semiconductor device according to the present invention comprises a substrate; a copper interconnect layer formed on the top surface side of the substrate; an aluminum bonding pad formed on the top surface side of the copper interconnect layer with an aluminum-based material; and an aluminum interconnect formed on the top surface side of the copper interconnect layer with an aluminum-based material.
申请公布号 US7122902(B2) 申请公布日期 2006.10.17
申请号 US20020127266 申请日期 2002.04.22
申请人 NEC ELECTRONICS CORPORATION 发明人 HATANO KEISUKE;ABIRU TAKAHISA
分类号 H01L23/48;H01L29/43;H01L21/28;H01L21/3205;H01L21/60;H01L21/768;H01L23/485;H01L23/52;H01L23/522;H01L23/532 主分类号 H01L23/48
代理机构 代理人
主权项
地址