发明名称 Semiconductor device including a transistor and a capacitor having an aligned transistor and capacitive element
摘要 A semiconductor ( 10 ) has an active device, such as a transistor, with a directly underlying passive device, such as a capacitor ( 75, 77, 79 ), that are connected by a via or conductive region ( 52 ) and interconnect ( 68, 99 ). The via or conductive region ( 52 ) contacts a bottom surface of a diffusion or source region ( 22 ) of the transistor and contacts a first ( 75 ) of the capacitor electrodes. A laterally positioned vertical via ( 32, 54, 68 ) and interconnect ( 99 ) contacts a second ( 79 ) of the capacitor electrodes. A metal interconnect or conductive material ( 68 ) may be used as a power plane that saves circuit area by implementing the power plane underneath the transistor rather than adjacent the transistor.
申请公布号 US7122421(B2) 申请公布日期 2006.10.17
申请号 US20050098070 申请日期 2005.04.04
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 SANCHEZ HECTOR;MENDICINO MICHAEL A.;MIN BYOUNG W.;YU KATHLEEN C.
分类号 H01L21/8242;H01L21/02;H01L21/20;H01L21/44;H01L21/4763;H01L21/768;H01L21/84;H01L23/48;H01L23/522;H01L27/06;H01L27/12 主分类号 H01L21/8242
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