| 摘要 |
A semiconductor device is provided to advantageously form a shallow junction necessary for miniaturization of a semiconductor device by forming an LDD(light doped drain) while using a first epitaxial layer made of impurity-doped silicon germanium. A gate insulation layer(3) and a gate electrode(4) are stacked on a predetermined region of a semiconductor substrate(1). A trench of a predetermined depth is formed in the semiconductor substrate exposed by the gate electrode. An impurity-doped epitaxial layer is formed in the trench to form an LDD region, made of silicon germanium. A spacer(5,8) is formed on the sidewall of the gate insulation layer and the gate electrode. A source/drain region is formed in the semiconductor substrate under the epitaxial layer outside the spacer. Metal silicide(10a,10b,10c) is formed on the epitaxial layer. The epitaxial layer is formed even on the gate electrode.
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