发明名称 |
Semiconductor device and production process |
摘要 |
An ohmic resistance is present between two parts of a conductor layer so that the size of the ohmic resistance can be ascertained and/or a semiconductor region is present in or on a layer forming the dielectric. The conductor layer is structured into a gate contact, a source contact, and a drain contact so that a transistor function or switching function is possible in the semiconductor region. Such a configuration allows an attempt to analyze the circuit integrated in the chip to be detected.
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申请公布号 |
US7122899(B2) |
申请公布日期 |
2006.10.17 |
申请号 |
US20020133336 |
申请日期 |
2002.04.26 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
LIPPMANN BERNHARD;WALLSTAB STEFAN;SCHMID GUENTER;LEUSCHNER RAINER |
分类号 |
H01L21/02;H01L23/58;H01L29/417;H01L29/45;H01L29/786 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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