发明名称 Semiconductor device and production process
摘要 An ohmic resistance is present between two parts of a conductor layer so that the size of the ohmic resistance can be ascertained and/or a semiconductor region is present in or on a layer forming the dielectric. The conductor layer is structured into a gate contact, a source contact, and a drain contact so that a transistor function or switching function is possible in the semiconductor region. Such a configuration allows an attempt to analyze the circuit integrated in the chip to be detected.
申请公布号 US7122899(B2) 申请公布日期 2006.10.17
申请号 US20020133336 申请日期 2002.04.26
申请人 INFINEON TECHNOLOGIES AG 发明人 LIPPMANN BERNHARD;WALLSTAB STEFAN;SCHMID GUENTER;LEUSCHNER RAINER
分类号 H01L21/02;H01L23/58;H01L29/417;H01L29/45;H01L29/786 主分类号 H01L21/02
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