摘要 |
A method for creating a semiconductor structure is provided. In accordance with the method, a semiconductor substrate ( 101 ) is provided over which is disposed a sacrificial layer ( 103 ), and which has a thin single crystal semiconductor layer ( 105 ) disposed over the sacrificial layer ( 103 ). An opening ( 107 ) is then created which extends through the semiconductor layer ( 105 ) and into the sacrificial layer ( 103 ). The semiconductor layer ( 105 ) is then epitaxially grown to a suitable device thickness, thereby resulting in a device layer. The semiconductor layer is grown such that the resulting device layer extends over the opening ( 107 ), and such that the surface of the portion of the device layer extending over the opening is single crystal silicon.
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